Working with VIGO Photonics, the following joint experiments of mutual interest in the area of infrared detectors were conducted:
- deposition of dielectric layers by Inductively Coupled Plasma – Plasma Enhanced Chemical Vapor Deposition (ICP-PECVD),
- etching of structures by Inductively Coupled Plasma Reactive Ion Etching (ICP-RIE),
- defining plasmonic structures by Electron Beam Lithography (EBL),
- device characterization (including Readout Integrated Circuits (ROIC)) by Scanning Electron Microscopy (SEM) and Energy Dispersive Spectroscopy (EDS),
- Optimization of the double side photolithography process.
- SEM investigations of patterns etched on both sides of the semiconductor wafer.SEM investigations of the surface quality and growth structure of the CdTe passivation layer on the HgCdTe-based materials,
- FIB preparation and EDS analysis of InGaAs detector layers,
- SEM analysis of the dielectrics’ deposition conformity on III-V-based semiconductor structures,
- magnetotransport studies.
Possibility of the production of industrial-standard test detectors from IV-VI/II-VI multilayers was investigated. Photonically optimized detector structures designed on the basis of PbTe/CdTe quantum wells with various configurations were tested at VIGO. The very promising outcomes of these tests resulted in the design of a new type of structures intended for multi-color, tunable infrared detectors. The solutions proposed in this case are universal and can also be incorporated into the design of detectors or emitters of electromagnetic radiation outside the infrared range.
Theoretical studies of electronic and optical properties of InAs/InAs0.625Sb0.375 superlattices were performed (joint publication J. Phys. D: Appl. Phys. 55, 495301 (2022)) .
Working with PUREMAT, the following joint experiments of mutual interest were conducted:
- experiments on MBE growth of Two-Dimensional Electron Gas structures with Mg and Mn produced by PUREMAT and aimed at improving 2D carrier mobility, as well as long-term stability and stability in terms of thermal cycling (growths on bulk substrates produced by PUREMAT),
- development of optical lithography, wet and dry etching procedures for telluride-based device structure,
- development of procedures for low temperature deposition of SiO2 and SiONx Experience with such a deposition of insulating layers vital both for MagTop (making gated 2D topological insulator structures based on the strongly temperature sensitive HgTe) and for PUREMAT (x-ray CdTe-based detector).
The preparation method of thermoelectric PbTe-CdTe semiconductor nanocomposite in the form of a bulk material doped with Bi, I or Na, intended for production the mid-temperature thermoelectric energy generators were studied (arXiv:2212.14616 (2022)). Invention of the MagTop and PUREMAT company, concerning a new thermoelectric composite material was patented in EPO (EP4036057B1).