Equipment

3 MBE growth chambers with long and very successful history of nanostructures growth
Newly installed dual growth chamber GENXplor MBE system from VEECO
Standard and high pressure Bridgman, as well as vapor transport techniques for single crytals growth of Bi, Sb, Pb, Sn, Zn, Cd chalcogenides and Cd, Zn arsenides, all doped with transition metals

Electron beam lithography (EBL), focused ion beam (FIB) lithography, and photolithography
ZEISS Auriga – CrossBeam Workstation
Reactive Ion Etching (RIE) Inductive Coupled Plasma (ICP) Source (Chlorine) and ICP-RIE with deposition PECVD (Fluorine)
Atomic Layer Deposition (ALD) – Remote plasma & thermal ALD FlexAL Oxford
UHV Sputtering System with electron gun sources

Dry Dilution Refrigerator Triton 400 Oxford Instruments (temperature range: without magnet: 10 mK – 300 K, with magnet: 10 mK- 30 K
Cathodoluminescence and Electron Beam Induced Current (EBIC) down to 5 K based on ZEISS EVO HD15 electron microscope (see picture below)
Set up for quantum transport characterization
Set up for Optical characterization
SQUID magnetometers Two SQUID magnetometers Quantum Design MPMS XL, 1.9 – 400 K (800 K with added apparatus), up to 5 T in AC, DC, RSO modes.
Scanning electron microscope ZEISS Auriga – CrossBeam Workstation (Ion imaging resolution of 2.5 nm at 30 kV, electron imaging resolution 1 nm at 15 kV ).