3 MBE growth chambers with long and very successful history of nanostructures growth
Newly installed dual growth chamber GENXplor MBE system from VEECO
Standard and high pressure Bridgman, as well as vapor transport techniques for single crytals growth of Bi, Sb, Pb, Sn, Zn, Cd chalcogenides and Cd, Zn arsenides, all doped with transition metals
Equipment for nanostructurization of topological materials and for making devices:
Electron beam lithography (EBL), focused ion beam (FIB) lithography, and photolithography
ZEISS Auriga – CrossBeam Workstation
Reactive Ion Etching (RIE) Inductive Coupled Plasma (ICP) Source (Chlorine) and ICP-RIE with deposition PECVD (Fluorine)